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[2] K. Cao, Z. Hu, J. Wang, F. Liu, X. Wu, Z. Wang, L. Wang, CVD growth of rhenium sulfide on carbon nanotubes as an anode for improving the performance of lithium ion batteries, Nanotechnology, 32 (2021) 155703.

[3] W. Hou, J. Wang, Z. Wang, K. Cao, L. Qin, L. Wang, Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases, CrystEngComm, 22 (2020) 1018-1023.

[4] Z. Wang, H. Yang, S. Zhang, J. Wang, K. Cao, Y. Lu, W. Hou, S. Guo, X.-A. Zhang, L. Wang, An approach to high-throughput growth of submillimeter transition metal dichalcogenide single crystals, Nanoscale, 11 (2019) 22440-22445.

[5] J. Wang, Y. Sheng, H. Sun, F. Gao, D. Zhang, Y. Zheng, Y. Shi, Enhanced polarization photodetection of metallic cavity ensemble through spontaneously configured lateral electrodes, Nanotechnology, 30 (2019) 495204.

[6] M. Sumiya, N. Toyomitsu, Y. Nakano, J. Wang, Y. Harada, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates, APL Materials, 5 (2017) 016105.

[7] J. Wang, H. Sun, Y. Sheng, L. Yang, F. Gao, Y. Yin, Z. Hu, Q. Wan, R. Zhang, Y. Zheng, Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies, Appl. Surf. Sci., 361 (2016) 221-225.

[8] J. Wang, Y. Oshima, Y. Cho, Y. Shi, T. Sekiguchi, Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN, Superlattices Microstruct., 99 (2016) 77-82.

[9] F. Gao, D. Zhang, J. Wang, H. Sun, Y. Yin, Y. Sheng, S. Yan, B. Yan, C. Sui, Y. Zheng, Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes, Appl. Phys. Lett., 108 (2016) 261103.

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[11] J. Wang, H. Sun, Y. Sheng, F. Gao, Y. Yin, Y. Li, L. Pan, Y. Zheng, Y. Shi, T. Sekiguchi, Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate, physica status solidi (RRL)–Rapid Research Letters, 9 (2015) 466-469.

[12] J. Wang, Y. Harada, M. Sumiya, Y. Shi, T. Sekiguchi, Cathodoluminescence study of optical properties along the growth direction of ZnO films on GaN substrate, physica status solidi (c), 12 (2015) 1129-1131.